Structural and electrical characteristics of ZrO2–TiO2 thin films by sol–gel method

In this paper, we investigated electrical properties and microstructures of ZrTiO4 (ZrO2–TiO2) thin films prepared by the sol–gel method on ITO substrates at different annealing temperatures. All films exhibited ZrTiO4 (1 1 1) and (1 0 1) orientations perpendicular to the substrate surface, and the grain size increased with increase in the annealing temperature. A low leakage current density of 2.06 × 10−6 A/cm2 was obtained for the prepared films. Considering the primary memory switching behavior of ZrTiO4, ReRAM based on ZrTiO4 shows promise for future nonvolatile memory applications.