Numerical solution of the anisotropic Poisson equation for SiC semiconductors device simulation

Classically, in semiconductor simulation programs it is assumed that the semiconductor material is isotropic, i.e. dielectric constant, transport parameters such as carrier mobility have no direction dependence. In this work, we propose a numerical study for the Poissonʹs equation, addressing the anisotropic properties for the hexagonal silicon carbide (SiC) polytype. The implementation uses a vectorized code. Investigation has been conducted for the 4H- and 6H-SiC. Our results have been compared with TCAD-dessis which enables anisotropic simulation, results have shown good agreement.