Optimization of parameters for silicon planar source of modulated infrared radiation

We report on the performance of planar silicon diodes operating in the double injection mode and emitting modulated infrared radiation at temperature range above 300 K. Results present theoretical analysis and experimental verification of an optimization aimed at maximal difference between emissivity of this structure for cases with and without forward bias applied to p–n junction. Several advantages of the structures were shown: wide emission spectrum (3÷12 μm), short rise-fall time (300 μs), high operating temperature (≈400 K). These planar photonic sources can be used as easily controlled sources of modulated infrared radiation in wide spectral range, image simulators, e.g. dynamic scene simulation devices with frame frequencies well above 200 Hz and for measurements of thermovision camera dynamic parameters.