Title of article
Non-volatile memory device using a polymer modified nanocrystal
Author/Authors
Kiazadeh، نويسنده , , A. and Gomes، نويسنده , , H.L. and da Costa، نويسنده , , A.M. Rosa and Moreira، نويسنده , , J.A. and de Leeuw، نويسنده , , D.M. and Meskers، نويسنده , , S.C.J.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2011
Pages
4
From page
1552
To page
1555
Abstract
Thin-film planar structures using AgCl nanocrystals embedded in a polymer blend; exhibit reliable and reproducible switching between different non-volatile conductance states. It is shown that resistive switching in these systems cannot be related with migration diffusion or aggregation of metals to form metallic filaments. This is supported by temperature-dependent measurement showing that the current in the high conductance state is thermal activated (0.6 eV).
Keywords
Non-volatile memories , Resistive switching , nanocrystals
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Serial Year
2011
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Record number
2148817
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