Title of article :
Non-volatile memory device using a polymer modified nanocrystal
Author/Authors :
Kiazadeh، نويسنده , , A. and Gomes، نويسنده , , H.L. and da Costa، نويسنده , , A.M. Rosa and Moreira، نويسنده , , J.A. and de Leeuw، نويسنده , , D.M. and Meskers، نويسنده , , S.C.J.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2011
Pages :
4
From page :
1552
To page :
1555
Abstract :
Thin-film planar structures using AgCl nanocrystals embedded in a polymer blend; exhibit reliable and reproducible switching between different non-volatile conductance states. It is shown that resistive switching in these systems cannot be related with migration diffusion or aggregation of metals to form metallic filaments. This is supported by temperature-dependent measurement showing that the current in the high conductance state is thermal activated (0.6 eV).
Keywords :
Non-volatile memories , Resistive switching , nanocrystals
Journal title :
MATERIALS SCIENCE & ENGINEERING: B
Serial Year :
2011
Journal title :
MATERIALS SCIENCE & ENGINEERING: B
Record number :
2148817
Link To Document :
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