Title of article
Study of polymorphous silicon as thermo-sensing film for infrared detectors
Author/Authors
Moreno، نويسنده , , M. and Torres، نويسنده , , A. and Ambrosio، نويسنده , , R. and Torres، نويسنده , , Jorge E. Loyo-Rosales، نويسنده , , P. and Zuٌiga، نويسنده , , C. and Reyes-Betanzo، نويسنده , , C. and Calleja، نويسنده , , W. and De la Hidalga، نويسنده , , J. and Monfil، نويسنده , , K.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2012
Pages
6
From page
756
To page
761
Abstract
In this work we have deposited and characterized pm-Si:H thin films obtained by plasma deposition. Our aim is to use pm-Si:H as thermo-sensing element for infrared (IR) detectors based on un-cooled microbolometers. We have studied the electrical characteristics of pm-Si:H that are figures of merit important for IR detection, as activation energy, thermal coefficient of resistance (TCR), room temperature conductivity (σRT) and responsivity under IR radiation. The influence of the substrate temperature (200 °C and 300 °C) on the pm-Si:H characteristics has been also studied. Our results shown that pm-Si:H is an excellent candidate to be used as thermo-sensing film for microbolometers, due to its large activation energy and TCR, with an improved σRT.
Keywords
amorphous silicon , Microbolometers , Polymorphous silicon
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Serial Year
2012
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Record number
2150327
Link To Document