Author/Authors :
Chi، نويسنده , , Choong-Soo and Jeong، نويسنده , , Yongsoo and Ahn، نويسنده , , Hong Joo and Lee، نويسنده , , Jong-Ho and Kim، نويسنده , , Jung-Gu and Lee، نويسنده , , Jun-Hee and Jang، نويسنده , , Kyung-Wook and Oh، نويسنده , , Han-Jun، نويسنده ,
Abstract :
A hydrous oxide film for the application as dielectric film is synthesized by immersion of pure aluminum in hot water. From a Rutherford backscattering analysis, the ratio of aluminum to oxygen atoms was found to be 3:2 in the anodized aluminum oxide film, and 2:1 in the hydrous oxide layer. Anodization of the hydrous oxide layer was more effective for the transition of amorphous anodic oxides to the crystalline aluminum oxides.
Keywords :
Hydrous layer , Anodization , Dielectric layer , Boehmite , RBS
