Electrical and structural properties of Mg-doped InxGa1−xN (x ≤ 0.1) and p-InGaN/n-GaN junction diode made all by RF reactive sputtering

Mg-doped InxGa1−xN (x = 0.025, 0.05, 0.075, and 0.1) films have been deposited on Si (1 0 0) substrates by RF reactive sputtering. Mg-InxGa1−xN films remained p-type conduction at x ≤ 0.075. This is the first try to have p-InGaN by sputtering. The film transformed into n-type conduction at x = 0.1. The highest mobility was found to be 62 cm2 V−1 s−1 in the Mg-In0.025Ga0.975N film, meanwhile the highest conductivity was found to be 9.1 S cm−1 in the Mg-In0.075Ga0.925N film due to the high hole concentration of 7.4 × 1018 cm−3. In addition, we also made p–n (p-Mg-In0.05Ga0.95N/n-GaN) junction diode all by using RF reactive sputtering. The p–n junction diode has leakage current of 2.7 × 10−6 A, the turn-on voltage of ∼1.8 V, and the breakdown voltage >−6.8 V. The p–n diode also has stable performance at elevated temperature.