Study of Pd–Si alloys density by means of penetrating γ-radiation

Temperature dependences of the density of Pd–Si alloys containing from 11 up to 33 at.% Si have been studied by means of the absolute method of penetrating γ- radiation in an interval from room temperature up to 1900 K. The accuracy of the measurement is ±0.6% and its resolution is within 0.2–0.3%. Liquidus and solidus temperatures of the investigated alloys (TL and TS, respectively), density changes during melting (Δρ) and pre-crystallization overcooling (ΔT) have been determined on the basis of the obtained data. TL and TS values are in good agreement with the known phase diagram of the system. Density and molar volume isotherms and also Δρ and ΔT concentration dependences have been plotted and demonstrate some anomalies near the stoichiometric composition of Pd3Si and in the concentration interval of easy amorphization of Pd–Si alloys.