Title of article
Structural Properties of Post Annealed ITO Thin Films at Different Temperatures
Author/Authors
-، - نويسنده Thin Film Laboratory, ECE Department, University of Tehran, Tehran, I.R. IRAN Manavizadeh, Negin , -، - نويسنده Thin Film Laboratory, ECE Department, University of Tehran, Tehran, I.R. IRAN Khodayari, Alireza , -، - نويسنده Thin Film Laboratory, ECE Department, University of Tehran, Tehran, I.R. IRAN Asl Soleimani, Ebrahim , -، - نويسنده Thin Film Laboratory, ECE Department, University of Tehran, Tehran, I.R. IRAN Bagherzadeh, Sheida , -، - نويسنده Nuclear Science and Technology Research Institute, Laser and Optics Research School, Tehran, I.R. IRAN Maleki, Mohammad Hadi
Issue Information
سالنامه با شماره پیاپی 50 سال 2009
Pages
5
From page
57
To page
61
Abstract
-
Abstract
Indium tin oxide (ITO) thin films were deposited on glass substrates by RF sputtering using an ITO ceramic target (In2O3-SnO2, 90-10 wt. %). After deposition, samples were annealed at different temperatures in vacuum furnace. The post vacuum annealing effects on the structural, optical and electrical properties of ITO films were investigated. Polycrystalline ITO films have been analyzed in wide optical spectrum, X-ray diffraction and four point probe methods. The results show that increasing the annealing temperature improves the crystallinity of the films. The resistivity of the deposited films is about 19×10-4 Ωcm and falls down to 7.3×10-5 Ωcm as the annealing temperature is increased to 500 °C in vacuum.
Journal title
Iranian Journal of Chemistry and Chemical Engineering (IJCCE)
Serial Year
2009
Journal title
Iranian Journal of Chemistry and Chemical Engineering (IJCCE)
Record number
2151950
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