SiGe field effect transistors

Starting from a brief review of the basics of FETs and BJTs, we discuss typical applications of the two types of transistors, which is followed by a FET performance analysis including the transconductance, speed, power consumption, and packing density. These sections form the foundations for the understanding of the pros and cons of strained SiGe FETs. Based on this foundation, we scrutinize the perceived advantages of using SiGe, review the array of SiGe FET structures, and look at material and processing challenges.