Title of article :
Fabrication and performance of GaN electronic devices
Author/Authors :
Pearton، نويسنده , , S.J. and Ren، نويسنده , , F. and Zhang، نويسنده , , A.P. and Lee، نويسنده , , K.P.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2000
Pages :
158
From page :
55
To page :
212
Abstract :
GaN and related materials (especially AlGaN) have recently attracted a lot of interest for applications in high power electronics capable of operation at elevated temperatures. Although the growth and processing technology for SiC, the other viable wide bandgap semiconductor material, is more mature, the AlGaInN system offers numerous advantages. These include wider bandgaps, good transport properties, the availability of heterostructures (particularly AlGaN/GaN), the experience base gained by the commercialization of GaN-based laser and light-emitting diodes and the existence of a high growth rate epitaxial method (hydride vapor phase epitaxy) for producing very thick layers or even quasi-substrates. These attributes have led to rapid progress in the realization of a broad range of GaN electronic devices, including heterostructure field effect transistors (HFETs), Schottky and p–i–n rectifiers, heterojunction bipolar transistors (HBTs), bipolar junction transistors (BJTs) and metal-oxide semiconductor field effect transistors (MOSFETs). This review focuses on the development of fabrication processes for these devices and the current state-of-the-art in device performance, for all of these structures. We also detail areas where more work is needed, such as reducing defect densities and purity of epitaxial layers, the need for substrates and improved oxides and insulators, improved p-type doping and contacts and an understanding of the basic growth mechanisms.
Keywords :
p–n Junctions , GaN electronic devices , Ohmic contact , Diodes
Journal title :
Materials Science and Engineering R Reports
Serial Year :
2000
Journal title :
Materials Science and Engineering R Reports
Record number :
2152412
Link To Document :
بازگشت