Title of article
Recent advances in Schottky barrier concepts
Author/Authors
Tung، نويسنده , , Raymond T.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2001
Pages
138
From page
1
To page
138
Abstract
Theoretical models of Schottky-barrier height formation are reviewed. A particular emphasis is placed on the examination of how these models agree with general physical principles. New concepts on the relationship between interface dipole and chemical bond formation are analyzed, and shown to offer a coherent explanation of a wide range of experimental data.
Keywords
Schottky-barrier height , Interface dipole , Interface states , Heterojunction band offsets
Journal title
Materials Science and Engineering R Reports
Serial Year
2001
Journal title
Materials Science and Engineering R Reports
Record number
2152444
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