Title of article
Encapsulated silver for integrated circuit metallization
Author/Authors
Adams، نويسنده , , Daniel and Alford، نويسنده , , T.L.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2003
Pages
44
From page
207
To page
250
Abstract
Silver has all the properties to complement copper for multilayer metallization in integrated circuit technology. The obvious drawbacks to Ag in terms of agglomeration and corrosion are overcome by use of encapsulation layers. The objective of this issue is to provide readers with a survey of some active areas in Ag-based metallization for interconnects ULSI applications. This work reflects the current research progress in this field from several different perspectives and provides advanced metallization solutions for future integrated circuit manufacturing.
Keywords
STRESS , resistivity , Dielectrics , Encapsulation , silver , Electromigration
Journal title
Materials Science and Engineering R Reports
Serial Year
2003
Journal title
Materials Science and Engineering R Reports
Record number
2152486
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