• Title of article

    Encapsulated silver for integrated circuit metallization

  • Author/Authors

    Adams، نويسنده , , Daniel and Alford، نويسنده , , T.L.، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2003
  • Pages
    44
  • From page
    207
  • To page
    250
  • Abstract
    Silver has all the properties to complement copper for multilayer metallization in integrated circuit technology. The obvious drawbacks to Ag in terms of agglomeration and corrosion are overcome by use of encapsulation layers. The objective of this issue is to provide readers with a survey of some active areas in Ag-based metallization for interconnects ULSI applications. This work reflects the current research progress in this field from several different perspectives and provides advanced metallization solutions for future integrated circuit manufacturing.
  • Keywords
    STRESS , resistivity , Dielectrics , Encapsulation , silver , Electromigration
  • Journal title
    Materials Science and Engineering R Reports
  • Serial Year
    2003
  • Journal title
    Materials Science and Engineering R Reports
  • Record number

    2152486