Characterization of electrically active dopant profiles with the spreading resistance probe

Since its original conception in the 1960s, the spreading resistance probe (SRP) has evolved into a reliable and quantitative tool for sub-micrometer, electrically active dopant, depth profiling in silicon. Its application limit has in recent years even been pushed down to ultra-shallow (sub-50 nm) structures. In this review, a systematic discussion is presented of all issues of importance for a high quality raw data collection and subsequent high accuracy data analysis. The main focus will be on the new developments over the last two decades. The qualification requirements to be fulfilled for 10% profile accuracy (in the absence of carrier spilling) and some of the main fields for SRP application in todayʹs industry will be covered. Finally, a critical assessment of the technique will be made, and its future roadmap will be discussed.