• Title of article

    Trends in semiconductor defect engineering at the nanoscale

  • Author/Authors

    Seebauer، نويسنده , , Edmund G. and Noh، نويسنده , , Kyong Wook، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2010
  • Pages
    18
  • From page
    151
  • To page
    168
  • Abstract
    Defect engineering involves manipulating the type, concentration, spatial distribution, or mobility of defects within a crystalline solid. Defect engineering in semiconductors has become much more sophisticated in recent years, driven by the need to control material properties at small length scales. The present article describes recent trends in defect engineering across several nano-oriented applications, beginning with Si-based integrated circuits and extending into non-Si microelectronics and especially into oxide semiconductors for sensors and photocatalysis. Special focus fixes upon physical mechanisms that have been little exploited up to now, but show significant promise as new means for controlling defect behavior, including low-energy ion bombardment, surface chemistry, and photostimulation. Systems-based methods for parameter estimation offer considerable promise for helping to understand the complex diffusion and reaction networks that characterize defect behavior in most prospective applications.
  • Keywords
    Defects , metal oxides , Nanoelectronics , Semiconductors , Defect engineering
  • Journal title
    Materials Science and Engineering R Reports
  • Serial Year
    2010
  • Journal title
    Materials Science and Engineering R Reports
  • Record number

    2152673