Grain boundary segregation of phosphorus and silicon in polycrystals and bicrystals of the Fe–2.6Si–0.055P alloy

Grain boundary segregation of phosphorus and silicon was investigated in polycrystals and bicrystals of an Fe–2.6Si–0.055P (wt.%) alloy after annealing at 600 or 800 °C by Auger electron spectroscopy. Lower segregation effects were revealed in bicrystals if compared with polycrystalline samples annealed at the same conditions. Intergranular fracture was found to be enhanced when the grain boundary concentration of phosphorus was increased.