Electron emission characteristics of C-BN films deposited by electrophoresis

In this paper, we introduce the process of fabricating C-BN film on a silicon tip field emitter array by the method of electrophoresis. Micrograph shows that the deposited C-BN film is uniform. The field emission characteristics of the C-BN-coated Si tip array have been studied and the turn-on electric field intensity of coated Si array is 22.5 V/μm, and the maximum current of 7.6 μA can be obtained at an electric field intensity of 38.7 V/μm.