A quantitative determination of the development of texture in thin films

Many electrical and mechanical properties of a material are influenced markedly by the distribution of the individual grain orientations, i.e. its texture. In this paper a new TEM technique is described, along with the analysis used, to identify the texture in a film. A single diffraction pattern from a scanned area on a polysilicon film on a cross-sectional TEM specimen is analysed enabling a semi-quantitative description of the texture of that area in the film. A series of these diffraction patterns from linescans parallel to the film surface is used to show how the texture develops through the film.