Title of article
A model for the hillock formation on graphite surfaces by 246 MeV Kr+ ions
Author/Authors
Nagy، نويسنده , , P and Szabَ، نويسنده , , B and Szabَ، نويسنده , , Zs and Havancsلk، نويسنده , , K and Birَ، نويسنده , , L.P and Gyulai، نويسنده , , J، نويسنده ,
Issue Information
دوماهنامه با شماره پیاپی سال 2001
Pages
8
From page
31
To page
38
Abstract
Scanning tunnelling microscopy has been used to study the effect of ion bombardment at different angles of incidence on a graphite surface. The 246 MeV energy of Kr+ ions was selected in the medium energy range, where the electronic and nuclear stopping is nearly balanced. The low dose (1×1012/cm2) of ions allows the characterization of single features caused by bombardment in perpendicular, at 30° and at 60° incidence. The density of hillocks caused by the ion bombardment is significantly lower than the ion dose and this density depends on the angle of incidence. The hillocks are attributed to knocked-on atoms leaving the sample surface. A simple model for the scattering process is presented to enlighten the hillock density differences. Other features produced by the ion bombardment, such as elongated traces and (√3×√3) R30 superstructures are also reported.
Keywords
Scanning tunnelling microscopy , Ion implantation , Hillock , Graphite
Journal title
Ultramicroscopy
Serial Year
2001
Journal title
Ultramicroscopy
Record number
2155542
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