Title of article
Holographic voltage profiling on 75 nm gate architecture CMOS devices
Author/Authors
Thesen، نويسنده , , Alexander E. and G. Frost، نويسنده , , Bernhard and C. Joy، نويسنده , , David، نويسنده ,
Issue Information
دوماهنامه با شماره پیاپی سال 2003
Pages
5
From page
277
To page
281
Abstract
Voltage profiles of the source–drain region of a CMOS transistor with 75 nm gate architecture taken from an off-the-shelf Intel PIII processor are presented. The sample preparation using a dual beam system is discussed as well as details of the electron optical setup of the microscope. Special attention is given to the analysis of the reconstructed holograms.
Keywords
Electron holography , Dopant profiling , CMOS devices
Journal title
Ultramicroscopy
Serial Year
2003
Journal title
Ultramicroscopy
Record number
2155900
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