Title of article
Nanotribological properties of precision-controlled regular nanotexture on H-passivated Si surface by current-induced local anodic oxidation
Author/Authors
Mo، نويسنده , , Yufei and Zhao، نويسنده , , Wenjie and Huang، نويسنده , , Deming and Zhao، نويسنده , , Yang-Fei and Bai، نويسنده , , Mingwu، نويسنده ,
Issue Information
دوماهنامه با شماره پیاپی سال 2009
Pages
6
From page
247
To page
252
Abstract
Nano-sized textures resulted from localized electrochemical oxidation by using atomic force microscopy (AFM) were fabricated on H-passivated Si surface. In this paper, the fabrication and nanotribological properties of nanotexture by local anodic oxidation (LAO) on H-passivated Si surface are presented. A special attention is paid to find the relation between the size of oxide nanotexture and operational parameters such as tip-sample pulsed bias voltage, pulsewidth, and relative humidity to fabricate oxide nanotexture. The nanotribological properties were investigated by a colloidal probe. The results indicate that the nanotextures exhibited low adhesion and greatly reduced friction force at nanometer scale.
Keywords
Nanotexture , Local anodic oxidation , atomic force microscopy , Nanotribology
Journal title
Ultramicroscopy
Serial Year
2009
Journal title
Ultramicroscopy
Record number
2157495
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