Title of article
3DAP analysis of (Ga,Mn)As diluted magnetic semiconductor thin film
Author/Authors
Kodzuka، نويسنده , , M. and Ohkubo، نويسنده , , T. and Hono، نويسنده , , K. and Matsukura، نويسنده , , F. and Ohno، نويسنده , , H.، نويسنده ,
Issue Information
دوماهنامه با شماره پیاپی سال 2009
Pages
5
From page
644
To page
648
Abstract
The distribution of Mn in a Ga0.963Mn0.037As ferromagnetic semiconductor film has been characterized by the three-dimensional atom probe (3DAP) technique. Atom probe specimens were directly prepared from the (Ga,Mn)As film grown epitaxially on a p-type GaAs substrate by the lift-out technique using a scanning electron microscope/focused ion beam system. The atom probe elemental map revealed that the Mn atoms in the Ga0.963Mn0.037As are uniformly dissolved without forming any nanometer-sized clusters.
Keywords
(Ga , Mn)As , Diluted magnetic semiconductor , specimen preparation , SEM , FIB , DMS , Atom probe
Journal title
Ultramicroscopy
Serial Year
2009
Journal title
Ultramicroscopy
Record number
2157591
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