Author/Authors :
Beltrلn، نويسنده , , A.M. and Marquis، نويسنده , , E.A. and Taboada، نويسنده , , A.G. and Ripalda، نويسنده , , J.M. and Garcيa، نويسنده , , J.M. and Molina، نويسنده , , S.I.، نويسنده ,
Abstract :
Unambiguous evidence of ring-shaped self-assembled GaSb nanostructures grown by molecular beam epitaxy is presented on the basis of atom-probe tomography reconstructions and dark field transmission electron microscopy imaging. The GaAs capping process causes a strong segregation of Sb out of the center of GaSb quantum dots, leading to the self-assembled GaAsxSb1−x quantum rings of 20–30 nm in diameter with x∼0.33.
Keywords :
Quantum ring , GASB , Atom-probe tomography , Transmission electron microscopy
