Title of article :
Dark-field electron holography for the measurement of geometric phase
Author/Authors :
Hےtch، نويسنده , , M.J. and Houdellier، نويسنده , , F. and Hue، نويسنده , , F. and Snoeck، نويسنده , , E.، نويسنده ,
Issue Information :
دوماهنامه با شماره پیاپی سال 2011
Pages :
10
From page :
1328
To page :
1337
Abstract :
The genesis, theoretical basis and practical application of the new electron holographic dark-field technique for mapping strain in nanostructures are presented. The development places geometric phase within a unified theoretical framework for phase measurements by electron holography. The total phase of the transmitted and diffracted beams is described as a sum of four contributions: crystalline, electrostatic, magnetic and geometric. Each contribution is outlined briefly and leads to the proposal to measure geometric phase by dark-field electron holography (DFEH). The experimental conditions, phase reconstruction and analysis are detailed for off-axis electron holography using examples from the field of semiconductors. A method for correcting for thickness variations will be proposed and demonstrated using the phase from the corresponding bright-field electron hologram.
Keywords :
Electron holography , Geometric phase , Dark-field electron holography , strain
Journal title :
Ultramicroscopy
Serial Year :
2011
Journal title :
Ultramicroscopy
Record number :
2158375
Link To Document :
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