Author/Authors :
Pettenkofer، نويسنده , , C. and Hofmann، نويسنده , , A. and Bremsteller، نويسنده , , Kathryn W. and Lehmann، نويسنده , , C. and Kelleter، نويسنده , , F.، نويسنده ,
Abstract :
CuInSe2 films were prepared by MBE on GaAs (1 1 1) substrates. ZnSe and ZnO are subsequently deposited in situ by MOMBE. Interface parameters like band offsets and morphology are studied by X-ray photoelectron spectroscopy (XPS) and Low energy electron diffraction (LEED). Spectroscopic XPEEM (X-ray photoelectron emission microscopy) at the U49/2 PGM2 beamline at BESSY was used to investigate the lateral homogenity of the interface. After annealing in situ a lateral inhomogenious In diffusion is observed into the ZnSe/ZnO interface.
