Author/Authors :
Liu، نويسنده , , Zhuang and Zhang، نويسنده , , Ying and Kok، نويسنده , , Shaw Wei and Ng، نويسنده , , Boon Ping and Soh، نويسنده , , Yeng Chai، نويسنده ,
Abstract :
This paper presents a near-field ellipsometry method for nano-scale thin film characterization. The method is based on a reflection configuration of near-field optical detection. In the method, a new set of ellipsometry equations is established by taking into consideration the near-field sample–probe interaction and the topography of the thin film. Experimental and simulation results have shown that the proposed near-field ellipsometry is able to attain precise thin film characterization with nano-scale lateral resolution.
