• Title of article

    Microstructure and strain distribution in freestanding Si membrane strained by SixNy deposition

  • Author/Authors

    Gao، نويسنده , , Hongye and Ikeda، نويسنده , , Ken-ichi and Hata، نويسنده , , Satoshi and Nakashima، نويسنده , , Hideharu and Wang، نويسنده , , Dong and Nakashima، نويسنده , , Hiroshi، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2010
  • Pages
    5
  • From page
    6633
  • To page
    6637
  • Abstract
    Strain in a bridge-shaped freestanding Si membrane (FSSM) induced by depositing an amorphous SixNy layer was measured by convergent-beam electron diffraction (CBED). CBED results show that the strain magnitude depends negatively on the FSSM thickness. FEM is a supplement of the result of CBED due to the relaxation of TEM samples during fabricating. The FEM analysis results ascertain the strain property in three dimensions, and show that the strain magnitude depends negatively on the length of FSSM, and the magnitude of the compressive strain in FSSM increases as the position is closer to the upper Si/SixNy interface.
  • Keywords
    FSSM , strain , FEM , CBED
  • Journal title
    MATERIALS SCIENCE & ENGINEERING: A
  • Serial Year
    2010
  • Journal title
    MATERIALS SCIENCE & ENGINEERING: A
  • Record number

    2163133