Title of article
Demonstration of a silicon photomultiplier with bulk integrated quenching resistors on epitaxial silicon
Author/Authors
Zhang، نويسنده , , G.Q. and Hu، نويسنده , , X.B. and Hu، نويسنده , , C.Z. and Yin، نويسنده , , D.P. and Liang، نويسنده , , K. and Yang، نويسنده , , R. and Han، نويسنده , , D.J.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2010
Pages
5
From page
116
To page
120
Abstract
In this paper we present the experimental results of a silicon photomultiplier (SiPM) with bulk integrated quenching resistors on epitaxial silicon. Compared with existing SiPM with polysilicon quenching resistors on the surface or with MRS structure, it has potential advantages of high photon detection efficiency (PDE) while retaining a large micro-cell density and the fabrication process is also simplified. The SiPM with the micro-cell density up to 104/mm2 and the PDE up to 25.6% is demonstrated. The characteristics of dark count rate, single photon detection capability, gain, optical crosstalk and PDE have been investigated and discussed.
Keywords
SiPM , MPPC , Bulk quenching resistor , Silicon photomultipliers
Journal title
Nuclear Instruments and Methods in Physics Research Section A
Serial Year
2010
Journal title
Nuclear Instruments and Methods in Physics Research Section A
Record number
2170295
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