Title of article
Characterisation studies of silicon photomultipliers
Author/Authors
Eckert، نويسنده , , Patrick and Schultz-Coulon، نويسنده , , Hans-Christian and Shen، نويسنده , , Wei and Stamen، نويسنده , , Rainer and Tadday، نويسنده , , Alexander، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2010
Pages
10
From page
217
To page
226
Abstract
This paper describes an experimental setup that has been developed to measure and characterise properties of silicon photomultipliers (SiPM). The measured SiPM properties are of general interest for a multitude of potential applications and comprise the photon detection efficiency (PDE), the voltage dependent cross-talk and the after-pulse probabilities. With the described setup the absolute PDE can be determined as a function of wavelength covering a spectral range from 350 to 1000 nm. In addition, a method is presented which allows to study the pixel uniformity in terms of the spatial variations of sensitivity and gain. The results from various commercially available SiPMs—three HAMAMATSU MPPCs and one SensL SPM—are presented and compared.
Keywords
Silicon PhotoMultiplier , Multi pixel photon counter , Geiger mode avalanche photodiode , Photon detection efficiency
Journal title
Nuclear Instruments and Methods in Physics Research Section A
Serial Year
2010
Journal title
Nuclear Instruments and Methods in Physics Research Section A
Record number
2170874
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