Title of article
Ohmic Contact of Cu/Mo and Cu/Ti Thin Layers on Multi-Crystalline Silicon Substrates
Author/Authors
-، - نويسنده Thin Film Laboratory, ECE Department, University of Tehran, Tehran, I.R. IRAN Dehghan Nayeri, Fatemeh , -، - نويسنده Thin Film Laboratory, ECE Department, University of Tehran, Tehran, I.R. IRAN Esfandiyarpour, Behzad , -، - نويسنده Thin Film Laboratory, ECE Department, University of Tehran, Tehran, I.R. IRAN Behnam, Ashkan , -، - نويسنده Thin Film Laboratory, ECE Department, University of Tehran, Tehran, I.R. IRAN Asl Soleimani, Ebrahim , -، - نويسنده Thin Film Laboratory, ECE Department, University of Tehran, Tehran, I.R. IRAN Mohajerzadeh, Shamsodin , -، - نويسنده Laser Research Center, Tehran, I.R. IRAN Maleki, Mohammad Hadi
Issue Information
فصلنامه با شماره پیاپی 43 سال 2007
Pages
5
From page
55
To page
59
Abstract
-
Abstract
Cu-Mo and Cu-Ti contact structures were fabricated on multi-crystalline silicon substrates to provide a low resistance ohmic contact. Deposition steps are done in an excellent vacuum chamber by means of electron beam evaporation and samples are then annealed for the realization of an efficient alloy layer. The effects of process parameters such as film thickness, annealing duration and temperature on the contact quality have been investigated and optimized for achieving the best special contact resistivity. The specific contact resistance obtained for Cu-Mo and Cu-Ti structures were 8.58×10-6 Ω-cm2 and 9.72×10-6 Ω-cm2, respectively. Finally, between the two proposed structures a comparison has been made which is resulted in the selection of Cu-Mo contact as the better structure due to its less resistance and better adhesion to the substrate.
Journal title
Iranian Journal of Chemistry and Chemical Engineering (IJCCE)
Serial Year
2007
Journal title
Iranian Journal of Chemistry and Chemical Engineering (IJCCE)
Record number
2171784
Link To Document