Development of transient current and charge techniques for the measurement of effective net concentration of ionized charges (Neff) in the space charge region of p-n junction detectors

Transient current and charge techniques (TCT/TChT) have been developed as alternatives to the standard C-V measurements for measurements of the effective net concentration of ionized charges (Neff) in the space charge region (SCR) of Si p-n junction detectors, especially for heavily irradiated detectors. This paper contains the physical background of the techniques, modeling of current and charge pulse response, and applications of the methods to the characterizations of silicon planar detectors designed for high energy physics.