Title of article :
The effect of radiation induced defects on the performance of high resistivity silicon diodes
Author/Authors :
Matheson، نويسنده , , J. and Robbins، نويسنده , , M. and Watts، نويسنده , , S.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 1996
Abstract :
An overview of defect kinetics in high resistivity silicon is presented. A device model which gives type inversion due to the presence of deep acceptors is described.
Journal title :
Nuclear Instruments and Methods in Physics Research Section A
Journal title :
Nuclear Instruments and Methods in Physics Research Section A
