Title of article
The effect of radiation induced defects on the performance of high resistivity silicon diodes
Author/Authors
Matheson، نويسنده , , J. and Robbins، نويسنده , , M. and Watts، نويسنده , , S.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1996
Pages
4
From page
224
To page
227
Abstract
An overview of defect kinetics in high resistivity silicon is presented. A device model which gives type inversion due to the presence of deep acceptors is described.
Journal title
Nuclear Instruments and Methods in Physics Research Section A
Serial Year
1996
Journal title
Nuclear Instruments and Methods in Physics Research Section A
Record number
2173175
Link To Document