Author/Authors :
Taylor، نويسنده , , G.N. and Fares، نويسنده , , Johannes F. and Bates، نويسنده , , S.J. and Furetta، نويسنده , , C. and Glaser، نويسنده , , M. and Lemeilleur، نويسنده , , F. and Leon-Florian، نويسنده , , E. and Gِكling، نويسنده , , C. and Kaiser، نويسنده , , John B. Anderson, Rolf Johannesson، نويسنده , , A. and Wunstorf، نويسنده , , R. and Feick، نويسنده , , H. and Fretwurst، نويسنده , , E. and Lindstrِm، نويسنده , , G. and Moll، نويسنده , , M. and Chilingarov، نويسنده ,
Abstract :
The paper discusses the current status of radiation damage to the bulk material of silicon detectors. In particular the main effects of current increase, change in the effective charge carrier density and its effect on the operation voltage, and the signal charge collection in silicon detectors are reviewed. Detailed measurements have allowed parametrization of the effects, which are in turn used to simulate long term performance of detectors in the environment expected in future hadron collider experiments. Recent results on pion damage measurements are highlighted. Studies aimed at reducing systematic errors inherent in comparing analyses of different groups are discussed, as are possible indications of material dependent effects from recent measurements.
