The influence of the preliminary ion implantation in the ZnSe on the properties of the ZnOZnSe structures, obtained by the radical beam gettering epitaxy method

The structure and photoluminescence (PL) of ZnOZnSe structures obtained by Radical Beam Gettering Epitaxy method on the implanted ZnSe substrates has been investigated. It was found that the implantation of Zn+ and Ar+ and the post-implantation annealing in the stream of atomic oxygen results in the appearance of an intense band with the maximum in the range of 525–535 nm in the PL spectra. The centre responsible for this band is the complex centre including zinc vacancy. terface boundary in the structure ZnOZnSe is sharp. The dimensions of the transient region are about 20 nm. The layers of zinc oxide are single crystals according to the data from electronic microscopy. nealing of the samples implanted with oxygen at doses of 1014–1015 cm−2 results in the appearance of an intense band with a maximum at 560 nm in the PL spectra of ZnSe crystals. plantation of O+ ions with a dose of 1019 cm−2 results in the formation of the ZnSe1 − xOx solid solution layer. bium PL spectra in the structures are dependent, to a great extent, on the technological conditions of ZnSe crystals annealing in the atomic oxygen stream.