Author/Authors :
Bondar، نويسنده , , A. and Buzulutskov، نويسنده , , A. and Nagaslaev، نويسنده , , V. and Shekhtman، نويسنده , , L. and Tatarinov، نويسنده , , A. and Blaut-Blachev، نويسنده , , A. and Bouilov، نويسنده , , L. and Spitsyn، نويسنده , , B.، نويسنده ,
Abstract :
AlN, a new semiconducting coating for microstrip gas chambers (MSGC) has been studied: The AlN surface resistivity is about 2 × 1015Ω/□ at a film thickness between 0.2 and 0.4μm. The rate capability of an MSGC with AlN undercoating is 105–106 mm−2s−1 depending on the surface resistivity value. The compatability of AlN undercoating with a particular lithographic technique for MSGCs with gold strips is investigated.
