Title of article :
Multichannel monolithic front-end system design — 3. High-value resistors in BJT-JFET technology
Author/Authors :
Baturitsky، نويسنده , , M.A and Dvornikov، نويسنده , , O.V.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 1997
Abstract :
This work is devoted to circuit design and fabrication technique permitting to form high-value resistors in BJT-JFET technology. The main resistor characteristics are presented. Simple equations are derived to estimate resistor nonlinearity, which take into consideration different process parameters of top and bottom gates semiconductor layers.
Journal title :
Nuclear Instruments and Methods in Physics Research Section A
Journal title :
Nuclear Instruments and Methods in Physics Research Section A
