Author/Authors :
Tsay، نويسنده , , Wen-Chin and Chen، نويسنده , , Yen-Ann and Laih، نويسنده , , Li-Hong and Hong، نويسنده , , Jyh-Wong and Chen، نويسنده , , Augustine E. and Lin، نويسنده , , Willis T. and Chang، نويسنده , , Yuan-Hann and Hou، نويسنده , , Suen R. and Li، نويسنده , , Chung-Ren and Ting، نويسنده , , Hsien-Jen and Liang، نويسنده , , Wei-Chen and Tang، نويسنده , , Jyh-Dong and Cheng، نويسنده , , Caleb C.P. and Chiang، نويسنده , , Song-Tsang، نويسنده ,
Abstract :
The 8 × 4 cm2 single-sided double-metal p+-i-n+ silicon microstrip detectors (SMDs) with coupling capacitors and polysilicon bias resistors were fabricated with the newly developed double-metal processing techniques with different inter-metal dielectrics. The results of using these processing techniques and some features of double-metal process are reported. The characteristics of polysilicon bias resistors obtained with BF2 ion-implantations having various doses and their effects on the leakage currents of SMDs have also been studied.
Keywords :
SMD (silicon microstrip detector) , ONO (oxide-nitride-oxide) , SOG (spin-on-glass) , double-metal , IMD (inter-metal dielectric) , PECVD (plasma-enhanced chemical vapor deposition)
