Title of article :
A novel charge amplifying technique
Author/Authors :
Wulleman، نويسنده , , Johan and Cornelis، نويسنده , , Jan، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 1998
Pages :
5
From page :
507
To page :
511
Abstract :
A low-power, BiCMOS front-end amplifier for capacitive detector read-out is discussed. The QDCAL Amplifier is a combination of a Dynamically Controlled Active Load (DCAL) and a Charge (Q) Amplifier. The QDCAL has a gain of 25 mV/fC, a power consumption Pt of ≈ 1.15 mW (bias circuit not included), an output (0–100%) peaking time t(0–100%) of ≈ 8 ns at a detector capacitance Cdet = 21 pF, and a mid-band input referred series noise spectral density 〈en〉 and parallel noise spectral density 〈in〉 of ≈ 1.22 nV/√Hz and ≈ 1.26 pA/√Hz, respectively. The circuit was developed in the radiation hard SOI BiCMOS-PJFET technology of DMILL.
Keywords :
Radiation hard SOI BiCMOS-PJFET technology , Capacitive detector read-out , Low-noise and low-power charge amplifier
Journal title :
Nuclear Instruments and Methods in Physics Research Section A
Serial Year :
1998
Journal title :
Nuclear Instruments and Methods in Physics Research Section A
Record number :
2177645
Link To Document :
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