Title of article
Study of electrical properties of high- and medium-resistivity silicon detectors irradiated with very high neutron fluence
Author/Authors
Biggeri، نويسنده , , U. and Borchi، نويسنده , , E. and Bruzzi، نويسنده , , M. and Li، نويسنده , , Z. and Verbitskaya، نويسنده , , E.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1998
Pages
4
From page
176
To page
179
Abstract
Electrical properties of high (4–6 kΩ cm) and medium (1–1.5 kΩ cm) resistivity p+/n/n+ silicon detectors irradiated with very high fluence neutrons, up to 4×1015 neutrons/cm2, have been studied. Some new results are presented and discussed.
Journal title
Nuclear Instruments and Methods in Physics Research Section A
Serial Year
1998
Journal title
Nuclear Instruments and Methods in Physics Research Section A
Record number
2178047
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