Author/Authors :
Li، نويسنده , , Z and Anderson، نويسنده , , D and Barnett، نويسنده , , B and Beuttenmuller، نويسنده , , R and Chen، نويسنده , , W and Chien، نويسنده , , C.Y and Frautschi، نويسنده , , M and Hu، نويسنده , , G and Kwan، نويسنده , , S and Lander، نويسنده , , D and Mani، نويسنده , , S and Pandey، نويسنده , , S and Wang، نويسنده , , Q and Willard، نويسنده , , S and Xie، نويسنده , , X، نويسنده ,
Abstract :
Various new configurations (n+/p/p+, n+/n/p+ and p+/n/n+) of silicon detector designs have been simulated using processing and device simulation tools, before and after irradiation to various fluences. The aim of material selection and detector design is to ensure adequate charge collection after being irradiated up to 1015 n/cm2 (or 6×1014 π/cm2) in LHC environment, which corresponds to a net increase (with long-term anneal) of space charge of 7×1013 cm−3. Starting materials selected for simulations include high resistivity p-type silicon, medium and low resistivity n-type silicon. Design of multi-guard-rings structure for high-voltage operation is also considered. First, irradiation data of low resistivity silicon detector is presented.
