Title of article :
Implanted silicon detector telescope: New developments
Author/Authors :
Musumarra، نويسنده , , A and Amorini، نويسنده , , F and Cabibbo، نويسنده , , M and Cardella، نويسنده , , G and DeGeronimo، نويسنده , , G and DiPietro، نويسنده , , A and Fallica، نويسنده , , P.G and Figuera، نويسنده , , P and Papa، نويسنده , , M and Pappalardo، نويسنده , , G and Rizzo، نويسنده , , F and Tudisco، نويسنده , , S، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 1998
Pages :
3
From page :
414
To page :
416
Abstract :
As a result of a collaboration between SGS-Thomson and INFN, a Monolithic Silicon Detector Telescope with ΔE/E of 4×4 mm2 with an ultra-thin ΔE stage (1 μm) has been recently presented as a tool to identify low-energy heavy ions. The good performances obtained in the charge identification are anyway limited by the relatively small active area. We report on two new larger area ΔE/E telescopes. The first one, a five strip detector with each ΔE strip 3×4 mm2 and a common E stage, has given on-beam good results. The second one, a 20×20 mm2 active area, is under test and is limited by the high capacitance of the ΔE stage (40 nF) requiring a suitable front-end electronics, presented in a different communication.
Journal title :
Nuclear Instruments and Methods in Physics Research Section A
Serial Year :
1998
Journal title :
Nuclear Instruments and Methods in Physics Research Section A
Record number :
2178112
Link To Document :
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