Title of article
Radiation damage due to pions and protons in SI-GaAs and their influence on the detector performance
Author/Authors
Rogalla، نويسنده , , M and Battke، نويسنده , , M and Duda، نويسنده , , N and Geppert، نويسنده , , R and Gِppert، نويسنده , , R and Ludwig، نويسنده , , J and Irsigler، نويسنده , , R and Schmid، نويسنده , , Th and Runge، نويسنده , , K and Sِldner-Rembold، نويسنده , , A، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1998
Pages
5
From page
41
To page
45
Abstract
The bulk damage (namely the introduction rate of the arsenic antisite AsGa and its ionization ratio) was determined as a function of the non-ionizing energy loss (NIEL) of hadrons in semi-insulating GaAs. The study was performed using near-infrared absorption on 23 GeV proton and 192 MeV pion irradiated, Liquid Encapsulated Czochralski (LEC) grown GaAs. Together with the detector performance as a function of the radiation level, the results are used to explain the radiation damage in GaAs particle detectors.
Keywords
Gallium arsenide , Radiation detectors , Radiation damage , EL2-introduction rate , Protons , pions
Journal title
Nuclear Instruments and Methods in Physics Research Section A
Serial Year
1998
Journal title
Nuclear Instruments and Methods in Physics Research Section A
Record number
2178189
Link To Document