Author/Authors :
Chmill، نويسنده , , V.B and Chuntonov، نويسنده , , A.V and Falaleev، نويسنده , , V and Smith، نويسنده , , K.M and Smol، نويسنده , , A.V and Vorobiev، نويسنده , , A.P and Tolbanov، نويسنده , , O.P، نويسنده ,
Abstract :
The results of irradiation of GaAs detectors with built-in π-ν-junction are presented. The GaAs samples have been exposed to the mixed beam of the SPS proton accelerator after the T9 target. This study has shown that the detector main characteristics (charge collection efficiency, signal/noise ratio) degrade less than a factor 2 at a fluence of 2×1014 cm−2.
