Author/Authors :
Bl?ha، نويسنده , , B. and Frank، نويسنده , , H. and Sopko، نويسنده , , B. and Bohm، نويسنده , , J. and N?me?ek، نويسنده , , S. and ?t’astn?، نويسنده , , J. and ?t?dro?، نويسنده , , M. and Van???kov?، نويسنده , , M.، نويسنده ,
Abstract :
A special semiconducting glass has been developed to be used as baseplates for the construction of Micro-Strip-Gas Chamber detectors, where it is necessary to combine adequate insulating properties with the possibility to drain the electric charge being built up by ionizing radiation. The composition of the glass together with two other samples of Moscow glass and of Schott S8900 glass is given. Resistivity and its temperature dependence have been measured to determine the activation energy. The carrier mobility and conduction type have been estimated by the Hall effect measurement according to van Heck’s method. A linear dependence of carrier mobility on activation energy was found, but Meyer–Neldel’s rule was not well fulfilled. The p-type conduction was determined by comparison with the Hall effect of a silicon sample of known conduction type.
