Title of article
Radiation damage of silicon strip detectors in the NA50 experiment
Author/Authors
Alessandro، نويسنده , , B. and Beolé، نويسنده , , S. and Bonazzola، نويسنده , , G. and Crescio، نويسنده , , E. and Dabrowski، نويسنده , , W. and Giubellino، نويسنده , , P. and Grybos، نويسنده , , P. and Idzik، نويسنده , , M. and Martinetto، نويسنده , , M. and Marzari-Chiesa، نويسنده , , A. and Masera، نويسنده , , M. and Prino، نويسنده , , F. and Ramello، نويسنده , , L. and Mendes، نويسنده , , P.R. and Riccati، نويسنده , , L. and Si، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1998
Pages
14
From page
556
To page
569
Abstract
During operation of the multiplicity detector in the NA50 experiment the single sided AC-coupled p-on-n silicon strip detectors were exposed to charged particle fluences up to 1014 eq n/cm2 and ionising doses up to 20 Mrad, with a very non-uniform radiation spatial distribution. Radiation effects in the detectors observed during the ’96 lead ion run as well as results of the post-run measurements are presented in this paper.
Keywords
Silicon strip detectors , Radiation damage , noisy channels
Journal title
Nuclear Instruments and Methods in Physics Research Section A
Serial Year
1998
Journal title
Nuclear Instruments and Methods in Physics Research Section A
Record number
2180196
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