Title of article
Annealing effects on irradiated n+n silicon detectors
Author/Authors
Allport، نويسنده , , P.P. and Booth، نويسنده , , P.S.L. and Green، نويسنده , , C. and Greenall، نويسنده , , A. and Jackson، نويسنده , , J.N and Jones، نويسنده , , T.J. and Richardson، نويسنده , , J.D. and Mart?? i Garc??a، نويسنده , , S. and Smith، نويسنده , , N.A. and Turner، نويسنده , , P.R. and Wormald، نويسنده , , M.P.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1999
Pages
8
From page
473
To page
480
Abstract
The performance of ATLAS forward region full-sized n+n prototype silicon micro-strip detectors has been studied after irradiation with 2×1014 protons/cm2 and 52 days annealing at 20°C. The signal-to-noise ratio measured at −10°C with LHC speed read-out was found to be degraded primarily due to increased noise. The reduction in the reverse current and the changes in the voltage needed for maximum charge collection have both been studied as a function of annealing time. Above the depletion voltage, no effect on the charge collection efficiency has been observed during this annealing period.
Journal title
Nuclear Instruments and Methods in Physics Research Section A
Serial Year
1999
Journal title
Nuclear Instruments and Methods in Physics Research Section A
Record number
2180275
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