Title of article :
Carrier lifetimes in heavily irradiated silicon diodes
Author/Authors :
Beattie، نويسنده , , L. and Brodbeck، نويسنده , , T.J and Chilingarov، نويسنده , , A. and Hughes، نويسنده , , G. and McGarry، نويسنده , , S. and Ratoff، نويسنده , , Claudia P. and Sloan، نويسنده , , T.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 1999
Pages :
10
From page :
502
To page :
511
Abstract :
Charge collection efficiencies for both minimum ionising and α-particle illumination have been measured for planar diodes which had been irradiated with fluences up to 3×1014 equivalent 1 MeV neutrons cm−2. These charge collection efficiencies have been fitted with a simple model and the carrier lifetimes extracted. The lifetimes are consistent with extrapolations of previous results at lower fluences. There is evidence of extra complication due to the heavy irradiation.
Keywords :
carrier lifetime , Irradiated silicon
Journal title :
Nuclear Instruments and Methods in Physics Research Section A
Serial Year :
1999
Journal title :
Nuclear Instruments and Methods in Physics Research Section A
Record number :
2180329
Link To Document :
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