Author/Authors :
Bertolucci، نويسنده , , E and Conti، نويسنده , , M and Mettivier، نويسنده , , G and Russo، نويسنده , , P and Cola، نويسنده , , A and Quaranta، نويسنده , , F and Vasanelli، نويسنده , , L and Bisogni، نويسنده , , M.G. and Bottigli، نويسنده , , U and Fantacci، نويسنده , , M.E and Stefanini، نويسنده , , A، نويسنده ,
Abstract :
We studied pixel radiation detectors for X-ray radiography based on semi-insulating GaAs: in particular, we investigated both annealed and non-annealed contact deposition techniques for the ohmic contact and both ring-guarded and non-guarded Schottky contact, in order to reduce the leakage current and to increase the maximum applied electric field. Spectroscopic characterization with a 60 keV 241 Am source has been performed. Among these different detectors, the CCE can reach 99±6%, while the energy resolution ΔE/E can go down to 4.1±0.2%.
