Study on boron depth profiles in boron-doped diamond films by broad resonance reaction 11B(p, α)8Be at Ep=660 keV

The boron depth profiles in heavily, moderately and lightly boron-doped diamond films are studied by a strong but broad nuclear resonance reaction 11B(p, α)8Be at Ep=660 keV. A convolution method was used to convert the measured α-spectra into corresponding boron depth profiles. To correlate the boron depth profiles with the structure and property of the boron-doped diamond films, some relevant performance characteristics of the films such as Raman shift and specific resistance are determined and discussed. Results indicate that the strong and broad nuclear resonance reaction 11B(p, α)8Be at Ep=660 keV combining with the data convolution analysis method is valuable and successful in determining boron depth profiles in boron-doped diamond films.