Title of article
A two-level model for heavily irradiated silicon detectors
Author/Authors
Borchi، نويسنده , , E and Bruzzi، نويسنده , , M and Li، نويسنده , , Z and Pirollo، نويسنده , , S، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1999
Pages
4
From page
343
To page
346
Abstract
The Fermi level pinning at a boundary value of ≈ Ev+0.5 eV, observed in heavily irradiated silicon, has been described considering two main traps related to divacancy (V2) and carbon–oxygen complex (CiOi), with energy levels at Ec − 0.46 eV (acceptor) and Ev+0.36 eV (donor), respectively. The appearance of a double junction in irradiated p+/n/n+ silicon detectors is discussed in the framework of the proposed model.
Journal title
Nuclear Instruments and Methods in Physics Research Section A
Serial Year
1999
Journal title
Nuclear Instruments and Methods in Physics Research Section A
Record number
2180862
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